2SC2120 Datasheet | Specifications & PDF Download

1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm • High hFE: hFE (1) = 10

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www.DataSheet4U.com ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided int

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ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y

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isc Silicon NPN Transistor DESCRIPTION ·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950 ·Minimum Lot-to-Lot variations

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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SC2120 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audi

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR (NPN) FEATURES z High DC Current Gain z C

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Elektronische Bauelemente 2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-

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2SC2120 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features hFE,, 1W , 2SA950 。

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Silicon Carbide Power Schottky Diode CDBD2SC21200-G Reverse Voltage: 1200V Forward Current: 2A RoHS Device Features - Rated to 1200V at 2 Amps - Shor

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