1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxia.
Toshiba Semiconductor
2SC2120 - TRANSISTOR
1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm • High hFE: hFE (1) = 10.
JIANGSU CHANGJIANG
2SC2120 - NPN Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR (NPN) FEATURES z High DC Current Gain z C.
SeCoS
2SC2120 - NPN Plastic Encapsulated Transistor
Elektronische Bauelemente 2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-.
Dc Components
2SC2120 - NPN Transistor
DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SC2120 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audi.
SEMTECH
2SC2120 - NPN Transistor
ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y .
INCHANGE
2SC2120 - Silicon NPN Transistor
isc Silicon NPN Transistor DESCRIPTION ·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950 ·Minimum Lot-to-Lot variations.
BLUE ROCKET ELECTRONICS
2SC2120 - Silicon NPN transistor
2SC2120 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features hFE,, 1W , 2SA950 。.
SEMTECH ELECTRONICS
ST2SC2120 - NPN Silicon Epitaxial Planar Transistor
www.DataSheet4U.com ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided int.
Comchip
CDBD2SC21200-G - Silicon Carbide Power Schottky Diode
Silicon Carbide Power Schottky Diode CDBD2SC21200-G Reverse Voltage: 1200V Forward Current: 2A RoHS Device Features - Rated to 1200V at 2 Amps - Shor.