2SC2229 Overview
IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 10mA ; IB= 1mA ICBO Collector Cutoff Current VCB= 200V; IE= 0 hFE DC Current Gain IC= 10mA.
| Part number | 2SC2229 |
|---|---|
| Datasheet | 2SC2229-INCHANGE.pdf |
| File Size | 171.72 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
|
IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 10mA ; IB= 1mA ICBO Collector Cutoff Current VCB= 200V; IE= 0 hFE DC Current Gain IC= 10mA.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SC2229 | NPN Transistor | Toshiba Semiconductor | |
![]() |
2SC2229 | NPN Transistor | SeCoS |