isc Silicon NPN Power Transistor
2SC2238 A B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO Collector-Emitter Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
CONDITIONS
IC= 10mA ; IB= 0
2SC2238
2SC2238A
2SC2238B
IE= 1mA ; IC= 0
MIN TYP. MAX UNIT
160
180
V
200
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
1.5
V
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 0.5A ; VCE= 5V
VCB= 160V ; IE= 0
VCB= 180V ; IE= 0
VCB= 200V ; IE= 0
2SC2238
2SC2238A
2SC2238B
VEB= 5V; IC= 0
1.0
V
1.0 μA
1.0 μA
hFE
DC Current Gain
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 5V
IE= 0; VCB= 10V; ftest= 1MHz
IC= 0.1A;VCE= 10V
70
240
30
pF
100
MHz
hFE Classifications
O
Y
70-140 120-240
Notice：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
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incidental damages.
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