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2SC2570A - NPN Transistor

General Description

NF = 1.5 dB TYP.

Ga = 8 dB TYP.

Wide Dynamic Range NF = 1.9 dB TYP.

Ga = 9 dB TYP.

100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable opera

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2570A DESCRIPTION ·Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA ·Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-noise amplifier of VHF ~ UHF stages. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 70 mA 0.