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2SC2831 - NPN Transistor

General Description

Low Collector Saturation Voltage Good Linearity of hFE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

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Part Number Description Manufacturer
2SC2831 SILICON POWER TRANSISTOR SavantIC
2SC2831A SILICON POWER TRANSISTOR SavantIC
2SC2830 SILICON POWER TRANSISTOR SavantIC
2SC2832 SILICON POWER TRANSISTOR SavantIC
2SC2832A SILICON POWER TRANSISTOR SavantIC

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2831 DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.