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2SC3211 - NPN Transistor

General Description

Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 500V(Min.) Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high

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isc Silicon NPN Power Transistor 2SC3211 DESCRIPTION · ·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.