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2SC3257 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Switching regulator and high voltage switching applications.

High speed DC-DC converter application

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isc Silicon NPN Power Transistor 2SC3257 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 1.