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2SC3298A - NPN Transistor

Download the 2SC3298A datasheet PDF. This datasheet also covers the 2SC3298 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Good Linearity of hFE High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B Complement to Type 2SA1306/A/B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifi

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Note: The manufacturer provides a single datasheet file (2SC3298-INCHANGE.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3298A Silicon NPN Transistor Toshiba
2SC3298 Silicon NPN Transistor Toshiba
2SC3298B Silicon NPN Transistor Toshiba Semiconductor
2SC3298B COMPLEMENTARY SILICON POWER TRANSISTORS Motorola
2SC3292 NPN Transistor Sanyo Semicon Device

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC3298 NPN Transistor
2SC3298B NPN Transistor
2SC3296 NPN Transistor
2SC3297 NPN Transistor
2SC3299 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistors 2SC3298/A/B DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B ·Complement to Type 2SA1306/A/B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 2SC3298 160 V 2SC3298A 180 2SC3298B 200 2SC3298 160 VCEO Collector-Emitter Voltage 2SC3298A 180 V 2SC3298B 200 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.