2SC3306 - NPN Transistor

Inchange Semiconductor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

High speed

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2SC3306 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SC3306
Manufacturer	Inchange Semiconductor
File Size	207.69 KB
Description	NPN Transistor
Datasheet	2SC3306 Datasheet

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Full PDF Text Transcription (Reference)

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3306 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications.