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2SC3307 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High speed and high voltage switching applications.

Switching regulator applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed and high voltage switching applications. ·Switching regulator applications. ·High speed DC-DC converter applications.