Datasheet4U Logo Datasheet4U.com

2SC3309 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Switching regulator and high voltage switching applications.

High speed DC-DC converter appli

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3309 SILICON POWER TRANSISTOR SavantIC
2SC3309 Silicon NPN Transistor Toshiba
2SC3300 SILICON POWER TRANSISTOR SavantIC
2SC3301 Silicon NPN Transistor Toshiba
2SC3302 Silicon NPN Transistor Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC3300 NPN Transistor
2SC3306 NPN Transistor
2SC3307 NPN Transistor
2SC3310 NPN Transistor
2SC3317 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.