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2SC3336 - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SC3336 APPLICATIONS Designed for high voltage, high speed and high power switching applic

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SC3336 APPLICATIONS ·Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 25 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7.5 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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