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2SC3336 Datasheet Preview

2SC3336 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
2SC3336
APPLICATIONS
·Designed for high voltage, high speed and high power
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base voltage
10
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
25
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
7.5
A
100
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SC3336 Datasheet Preview

2SC3336 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
2SC3336
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA; IB=0
400
V
VCEX(SUS)
Collector-Emitter Sustaining Voltage
IC= 15A; IB1= 3A; IB2= -1A;
VBE= -5V; L= 180μH; Clamped
400
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
10
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 1.5A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 7.5A; IB= 1.5A
1.5
V
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
50 μA
ICEO
Collector Cutoff Current
VCE= 350V; RBE=
50 μA
hFE-1
DC Current Gain
IC= 7.5A; VCE= 5V
12
hFE-2
DC Current Gain
IC= 15A; VCE= 5V
5
Switching times
ton
Turn-on Time
0.5 μs
tstg
Storage Time
IC= 15A, IB1= -IB2= 3A; VCC250V
1.5 μs
tf
Fall Time
0.5 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SC3336
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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2SC3336 Datasheet PDF





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