2SC3336 Overview
Description
With TO-3P(I) package - High voltage,high speed APPLICATIONS - For high voltage ; high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 10 15 25 7.5 100 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ,RBE=9;L=100mH IE=10mA; IC=0 IC=7.5A; IB=1.5A IC=7.5A; IB=1.5A VCB=400V; IE=0 VCE=350V; RBE=9 IC=7.5A ; VCE=5V IC=15A ; VCE=5V 12 5 MIN 400 10 2SC3336 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE sat ICBO ICEO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 50 50 V V µA µA Switching times ton tstg tf Turn-on time Storage time Fall time IC=15A ; VCC=150V IB=-IB=3.0A 0.5 1.5 0.5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3336 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3336 4.
