| Part Number | 2SC3336 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SC3336
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-3P
1. Base 2. Collector (Flange) 3. Emitter
1
2
3
2SC3336
Absolute Maximum Ratings (.
≅ = 150 V I C = 7.5 A, IB = 1.5 A*1
Emitter to base breakdown voltage Collector cutoff current
V(BR)EBO I CBO I CEO
10 * * 12 5 * * * * * * * * * * * * * * 0.3 * 50 50 * * 1.0 1.5 0.5 1.5 0.5 V µA µA DC current transfer ratio hFE1 hFE2 Collector to emitter saturation voltage Base to emitter. |
2SC3336 Datasheet and Specifications PDF
The 2SC3336 is a Silicon NPN Transistor.
Key Specifications
| Max Operating Temp | 140 °C |
|---|
| Part Number | 2SC3336 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SC3336 . ector-Emitter Sustaining Voltage IC= 20mA; IB=0 400 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 15A; IB1= 3A; IB2= -1A; VBE= -5V; L= 180μH; Clamped 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 1.5A. |
| Part Number | 2SC3336 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3P(I) package ·High voltage,high speed APPLICATIONS ·For high voltage ; high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fi. tor-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ,RBE=9;L=100mH IE=10mA; IC=0 IC=7.5A; IB=1.5A IC=7.5A; IB=1.5A VCB=400V; IE=0 VCE=350V; RBE=9 IC=7.5A ; VCE=5V IC=15A ; VCE=5V 12 5 MI. |