2SC3336 Datasheet | Hitachi Semiconductor

Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) IB PC - Tj Tstg Ratings 500 400 10 15 25 7.5 100 150 - 55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 400 400 Typ - - Max - - Unit V V Test conditions I C = 0.2 A, RBE = ∞, L = 100 m H I C = 15 A, IB1 = 3.0 A, IB2 = - 1 A VBE = - 5.0 V, L = 180 µH, Clamped I E = 10 m A, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5.0 V, IC = 7.5 A- 1 VCE = 5.0 V, IC = 15 A- 1 V V µs µs µs I C = 15 A, IB1 = - IB2 = 3.0 A VCC ≅ = 150 V I C = 7.5 A, IB = 1.5 A- 1 Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO - - 12 5 - - - - - - - - - - - - - - 0.3 - 50 50 - - 1.0 1.5 0.5 1.5 0.5 V µA µA DC current transfer ratio h FE1 h FE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test VCE(sat) VBE(sat) t on t stg tf Maximum Collector Dissipation Curve 150 Collector power dissipation PC (W) 100 30 Collector current IC (A) i C(peak) µs 25 0 µs s 5 0µ s s 25 1m 0m n =1 tio era PW Op °C DC = 25 TC Area of Safe...