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2SC3409 - NPN Transistor

General Description

Low Collector Saturation Voltage 100% avalanche tested Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM R

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3409 DESCRIPTION ·Low Collector Saturation Voltage ·100% avalanche tested ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 2 A ICM Collector Current-Pulse 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.