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2SC3416 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V (Min) Complement to Type 2SA1352 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V (Min) ·Complement to Type 2SA1352 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV chroma output, high-voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3416 isc website：www.iscsemi.