Datasheet4U Logo Datasheet4U.com

2SC3419 - NPN Transistor

General Description

Low Collector Saturation Voltage High power dissipation Complementary to 2SA1356 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3419 Silicon NPN Transistor Toshiba Semiconductor
2SC3412 Power Transistor Inchange Semiconductor
2SC3413 Silicon NPN Epitaxial Transistor Hitachi Semiconductor
2SC3415 NPN Plastic-Encapsulated Transistor SeCoS
2SC3415 Triple Diffused Planar NPN Silicon Transistor Rohm

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC3416 NPN Transistor
2SC3409 NPN Transistor
2SC3420 NPN Transistor
2SC3423 NPN Transistor
2SC3424 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3419 DESCRIPTION ·Low Collector Saturation Voltage ·High power dissipation ·Complementary to 2SA1356 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 0.8 A 5.0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.