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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3419
Medium-Power Amplifier Applications.
2SC3419
Unit: mm
• Low saturation voltage: VCE (sat) = 0.25 V (typ.) (IC = 500 mA, IB = 50 mA)
• High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SA1356
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage
VCBO 40 V VCEO 40 V
Emitter-base voltage Collector current Base current
VEBO IC IB
5V 800 mA 80 mA
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.2 W
5
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-8H1A
Note: Using continuously under heavy loads (e.g.
2SC3419 Datasheet
