2SC3419 Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. mm Low saturation voltage: VCE (sat) = 0.25 V (typ.) (IC = 500 mA, IB = 50 mA) High collector power dissipation:.
| Part number | 2SC3419 |
|---|---|
| Datasheet | 2SC3419_ToshibaSemiconductor.pdf |
| File Size | 132.51 KB |
| Manufacturer | Toshiba |
| Description | Silicon NPN Transistor |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. mm Low saturation voltage: VCE (sat) = 0.25 V (typ.) (IC = 500 mA, IB = 50 mA) High collector power dissipation:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SC3419 | NPN Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| 2SC3405 | Silicon NPN Triple Diffused Type TRANSISTOR |
| 2SC3420 | Silicon NPN Transistor |
| 2SC3421 | Silicon NPN Transistor |
| 2SC3422 | Silicon NPN Transistor |
| 2SC3423 | Silicon NPN Transistor |
| 2SC3425 | Silicon NPN Transistor |
| 2SC3429 | Silicon NPN Transistor |
| 2SC3437 | Silicon NPN Transistor |
| 2SC3474 | Silicon NPN Epitaxial Type TRANSISTOR |
| 2SC3006 | Silicon NPN epitaxial planer type Transistor |