2SC3419
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Medium-Power Amplifier Applications.
Unit: mm
- Low saturation voltage: VCE (sat) = 0.25 V (typ.) (IC = 500 m A, IB = 50 m A)
- High collector power dissipation: PC = 1.2 W (Ta = 25°C)
- plementary to 2SA1356
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage
VCBO 40 V VCEO 40 V
Emitter-base voltage Collector current Base current
VEBO IC IB
5V 800 m A 80 m A
Collector power dissipation
Ta = 25°C Tc = 25°C
1.2 W
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
- 55 to 150
°C
JEITA TOSHIBA
― 2-8H1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 0.82 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating...
