Datasheet Details
| Part number | 2SC3631-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.68 KB |
| Description | NPN Transistor |
| Download | 2SC3631-Z Download (PDF) |
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| Part number | 2SC3631-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.68 KB |
| Description | NPN Transistor |
| Download | 2SC3631-Z Download (PDF) |
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·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·High current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3631-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC=1mA;
IB=0 BVCEO Collector-Emitter Breakdown Voltage IC=10mA;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3631-Z.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3631-Z | NPN Transistor | NEC |
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2SC3631-Z | SILICON POWER TRANSISTOR | Renesas |
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2SC3631 | NPN SILICON TRIPLE DIFFUSED TRANSISTOR | NEC |
| Part Number | Description |
|---|---|
| 2SC3632 | NPN Transistor |
| 2SC3632-Z | NPN Transistor |
| 2SC3621 | NPN Transistor |
| 2SC3642 | NPN Transistor |
| 2SC3675 | NPN Transistor |
| 2SC3676 | NPN Transistor |
| 2SC3677 | NPN Transistor |
| 2SC3012 | NPN Transistor |
| 2SC3025 | NPN Transistor |
| 2SC3026 | NPN Transistor |