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2SC3631-Z - NPN Transistor

Description

With TO-252(DPAK) packaging Excellent linearity of hFE Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers High-speed inverters Converte

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Datasheet Details

Part number 2SC3631-Z
Manufacturer INCHANGE
File Size 185.68 KB
Description NPN Transistor
Datasheet download datasheet 2SC3631-Z Datasheet
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3631-Z DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·High current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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