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2SC3642 - NPN Transistor

General Description

Low Collector Saturation Voltage High breakdown voltage and high reliability Fast switching speed Wide ASO NPN triple diffused planar silicon transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3642 DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage and high reliability ·Fast switching speed ·Wide ASO ·NPN triple diffused planar silicon transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh deflection display ·Horizontal deflection output application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Pulse 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 100 W 15