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2SC3709A Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor 2SC3709A.

General Description

·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1451A APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICP* Pulse Collector Current 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ *Tested in QT-2 transistor graphic instrument and test condition is IB=2A,VCE=5V.

isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;

IB= 0 VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC= 6A;

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