2SC3709A Datasheet and Specifications PDF

The 2SC3709A is a Silicon NPN Transistor.

Key Specifications

Max Operating Temp150 °C
Part Number2SC3709A Datasheet
ManufacturerToshiba
Overview TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A 2SC3709A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed . absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 E.
Part Number2SC3709A Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1451A APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RAT. E(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC= 6A; IB= 0.3A IC= 6A; IB= 0.3A VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain IC= 6A; VCE= 1V COB .

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