2SC3743 Overview
· ·Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3743 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
