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2SC3874 - NPN Transistor

General Description

Silicon NPN triple diffusion planar type High Switching Speed Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage high-speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

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isc Silicon NPN Power Transistor isc Product Specification 2SC3874 DESCRIPTION ·Silicon NPN triple diffusion planar type ·High Switching Speed ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage high-speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.