2SC3890 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 3A High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator an

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Datasheet Details

Part number	2SC3890
Manufacturer	Inchange Semiconductor
File Size	202.90 KB
Description	NPN Transistor
Datasheet	2SC3890 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC3890 isc website：www.