Low Collector Saturation Voltage
High Collector-Emitter Breakdown Voltage
: V(BR)CEO= 400V (Min)
High Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for switching regulator applications
ABSOLUTE MAXIM
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isc Silicon NPN Power Transistor
2SC3969
DESCRIPTION ·Low Collector Saturation Voltage ·High Collector-Emitter Breakdown Voltage
: V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
4
A
20 W
2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SC3969 Datasheet
