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2SC4024 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC-DC converter,Emergency lighting Inverter and general purpose ABSOLUTE MAX

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4024 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC-DC converter,Emergency lighting Inverter and general purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 3 A 35 W 150 ℃ -55~150 ℃ isc website:www.iscsemi.