2SC4116 Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO BVCEO BVEBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 Collector-Emitter Voltage Breakdown IC= 1mA ; IB= 0 Emitter-Base Breakdown Voltage IE= 0.1mA.
