Inchange Semiconductor 2SC4111
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4111 |
|---|---|
| Datasheet | 2SC4111 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min)●High Switching Speed
●Wide Area of Safe Operation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for horizontal output applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Pulse 22 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3.5 A 150 W 3.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4111 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IB= 0 VCE(sat) Collector-Emitter Sa...