Datasheet Details
| Part number | 2SC4116 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.84 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4116-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC4116 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.84 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4116-INCHANGE.pdf |
|
|
|
·With SOT-323 packaging ·High collector-base voltage ·High power dissipation ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.15 A 0.1 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4116 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO BVCEO BVEBO Collector-Base Breakdown Voltage IC= 0.1mA ;
IE= 0 Collector-Emitter Voltage Breakdown IC= 1mA ;
IB= 0 Emitter-Base Breakdown Voltage IE= 0.1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC4116 | NPN Silicon Epitaxial Planar Transistor | GME |
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2SC4116 | NPN Transistor | Toshiba Semiconductor |
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