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2SC4478 - NPN Transistor

General Description

Fast switching speed NPN epitaxial planar silicon transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High deflection CRT display Horizontal deflection output applications ABSOLUTE MAXIMUM RA

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4478 DESCRIPTION ·Fast switching speed ·NPN epitaxial planar silicon transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High deflection CRT display ·Horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 4 A 30 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.