Low Collector Saturation Voltage
:VCE(sat)= 0.5(V)(Max)@IC= 2A
High Switching Speed
Complement to Type 2SA1726
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio and general purpose ap
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4512
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= 0.5(V)(Max)@IC= 2A ·High Switching Speed ·Complement to Type 2SA1726 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc Website：www.iscsemi.
2SC4512 Datasheet
