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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4517
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 550V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
550
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
1.5
A
30
W
150
℃
-55~150 ℃
isc Website：www.iscsemi.
2SC4517 Datasheet
