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2SC4559 - NPN Transistor

General Description

Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high speed switching applications.

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4559 DESCRIPTION · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.