2SC4744 Overview
·High Breakdown Voltage- : MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 400mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;.
| Part number | 2SC4744 |
|---|---|
| Datasheet | 2SC4744-INCHANGE.pdf |
| File Size | 217.28 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·High Breakdown Voltage- : MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 400mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SC4744 | Silicon NPN Transistor | Hitachi Semiconductor |