Datasheet Details
| Part number | 2SC4743 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.56 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4743-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4743.
| Part number | 2SC4743 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.56 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4743-INCHANGE.pdf |
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 6 A IC(peak) Collector Current-Peak 7 A IC(surge) Collector Current-Surge PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4743 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
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| Part Number | Description |
|---|---|
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