High Breakdown Voltage
High Switching Speed
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Very high-definition CRT display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4880
DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Very high-definition CRT display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1700
V
VCEO
Collector-Emitter Voltage
900
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
20
A
20 W
100
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.
2SC4880 Datasheet
