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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4907
DESCRIPTION ·Collector–Emitter Breakdown Voltage
: V(BR)CEO= 500V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
600
V
VCEO Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-peak
12
A
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
2
A
30
W
150
℃
-55~150 ℃
isc Website：www.iscsemi.
2SC4907 Datasheet
