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2SC4927 - NPN Transistor

General Description

High Breakdown Voltage- : VCES= 1500V(Min) Built-in damper diode type Isolated package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV/character display horizontal deflection output applications

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4927 DESCRIPTION ·High Breakdown Voltage- : VCES= 1500V(Min) ·Built-in damper diode type ·Isolated package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·TV/character display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 9 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ID C-E Diode Forward Current 8 A isc Website：www.iscsemi.