High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
High Switching Speed
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for character display horizontal deflection output
application
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4928
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for character display horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
IC(surge) Collector Current-Surge
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
20
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc Website：www.iscsemi.
2SC4928 Datasheet
