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2SC5042 - NPN Transistor

General Description

NPN triple diffused planar silicon transistor High Breakdown Voltage High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Very high-definition CRT display horizontal deflection output

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5042 DESCRIPTION ·NPN triple diffused planar silicon transistor ·High Breakdown Voltage ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 3 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Websit