Silicon NPN diffused planar transistor
Good Linearity of hFE
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for display horizontal deflection output
Switching regulator and general purpose
ABSO
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5124
DESCRIPTION ·Silicon NPN diffused planar transistor ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for display horizontal deflection output
Switching regulator and general purpose
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
4
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.