2SC5174 - NPN Transistor

Inchange Semiconductor

General Description

Silicon NPN epitaxial type Low Collector Saturation Voltage High transition frequency Complementary to 2SA1932 Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Dr

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Datasheet Details

Part number	2SC5174
Manufacturer	Inchange Semiconductor
File Size	180.50 KB
Description	NPN Transistor
Datasheet	2SC5174 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5174 DESCRIPTION ·Silicon NPN epitaxial type ·Low Collector Saturation Voltage ·High transition frequency ·Complementary to 2SA1932 ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Pulse 3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.1 A 1.