2SC5172 Overview
·High Collector Breakdown Voltage : IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A;.
| Part number | 2SC5172 |
|---|---|
| Datasheet | 2SC5172-InchangeSemiconductor.pdf |
| File Size | 178.96 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Transistor |
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·High Collector Breakdown Voltage : IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SC5172 | NPN TRANSISTOR | Toshiba Semiconductor |
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