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2SC5172 - Silicon NPN Transistor

General Description

High Collector Breakdown Voltage : VCEO =400V APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications isc Product Specification 2SC5172 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vol

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Breakdown Voltage : VCEO =400V APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications isc Product Specification 2SC5172 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 5A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2A 25 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.