Datasheet Details
| Part number | 2SC5171 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 170.66 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC5171-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5171.
| Part number | 2SC5171 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 170.66 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC5171-INCHANGE.pdf |
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·High Transition Frenquency : fT=200MHz(Typ.) ·plementary to 2SA1930 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：.iscsemi.cn 1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5171 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A;
IB= 0.1A VBE(on) Base-Emitter Voltage IC= 1A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5171 | NPN TRANSISTOR | Toshiba Semiconductor |
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2SC5171 | NPN Transistor | JCET |
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