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2SC5171 - Silicon NPN Power Transistor

General Description

High Transition Frenquency : fT=200MHz(Typ.) Complementary to 2SA1930 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMU

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5171 DESCRIPTION ·High Transition Frenquency : fT=200MHz(Typ.) ·Complementary to 2SA1930 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.