Datasheet Details
| Part number | 2SC5174 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5174-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5174.
| Part number | 2SC5174 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5174-INCHANGE.pdf |
|
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·Silicon NPN epitaxial type ·Low Collector Saturation Voltage ·High transition frequency ·plementary to 2SA1932 ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Pulse 3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.1 A 1.8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5174 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA;
IB= 50mA VBE(ON) Base-Emitter On Voltage IC= 500mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5174 | Silicon NPN Transistor | Toshiba Semiconductor |
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