Datasheet4U Logo Datasheet4U.com

2SC5439 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Switching regulator applications.

High voltage switching applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC5439 NPN TRANSISTOR Toshiba Semiconductor
2SC5439 SILICON POWER TRANSISTOR SavantIC
2SC5431 NPN TRANSISTOR NEC
2SC5432 NPN TRANSISTOR NEC
2SC5433 NPN TRANSISTOR NEC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC5404 NPN Transistor
2SC5407 NPN Transistor
2SC5411 PNP Transistor
2SC5416 NPN Transistor
2SC5417 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator applications. ·High voltage switching applications. ·DC-DC converter applications. ·Inverter lighting applications.