2SC5855 Overview
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=8A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC=8A;.
2SC5855 Details
| Part number | 2SC5855 |
|---|---|
| Datasheet | 2SC5855-INCHANGE.pdf |
| File Size | 184.76 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
