Datasheet4U Logo Datasheet4U.com

2SC5851 - Silicon NPN Epitaxial Type Transistor

Key Features

  • High frequency amplifier Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5851 www. DataSheet4U. com Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC.
  • Tj Tstg Ratings 30 30 5 100 150 150.
  • 55 to +125 Unit V V V mA mW °C °C.
  • Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm).

📥 Download Datasheet

Datasheet Details

Part number 2SC5851
Manufacturer Renesas
File Size 133.89 KB
Description Silicon NPN Epitaxial Type Transistor
Datasheet download datasheet 2SC5851 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.